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RFJS3006F的详细信息

Detail: Advanced High Voltage GaN Technology ■ Normally-off Insulated Gate ■ Very low RDS(ON) Reduces Conduction Losses ■ Ultra-Low Switching Losses ■ Internal Ultra-Fast FW Diode ■ Low-Output Capacitance ■ UL Recognized Isolation (of the TO247 Mounting Tab)