Image RN1111ACT(TPL3)
型号:

RN1111ACT(TPL3)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体晶体管(BJT) - 单路﹐预偏压式
描述: tran npn cst3 50v 100a
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RN1111ACT(TPL3)的详细信息

Product Photos:
CST3:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single, Pre-Biased
Series: -
Packaging : Cut Tape (CT)
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Dynamic Catalog: NPN Pre-biased Transistors
Other Names: RN1111ACT(TPL3)CT