Image RN2704JE(TE85L,F)
型号:

RN2704JE(TE85L,F)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体晶体管(BJT) - 阵列﹐预偏压式
描述: tran dual CE pnp esv -50v -100a
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RN2704JE(TE85L,F)的详细信息

Datasheets:
RN2701JE-06JE:
Product Photos:
SOT-553:
Standard Package : 4,000
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Arrays, Pre-Biased
Series: -
Packaging : Tape & Reel (TR)
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Dynamic Catalog: PNP Pre-Biased Transistor Arrays
Other Names: RN2704JE(TE85LF)TR

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