|
| 型号： | S9012 |
| 厂商： |
 Weitron Technology |
| 描述： | pnp general purpose transistors |
| PDF： | 预览 |
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Datasheet下载地址
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S9012的详细信息
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S9012
PNP General Purpose Transistors
TO-92
P b
Lead(Pb)-Free
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Unit
Vdc
Vdc
Vdc
mAdc
Value
-25
-40
-5
-500
V
CEO
V
V
CBO
EBO
I
C
P
0.625
150
Total Device Dissipation T =25 C
W
C
CM
A
Junction Temperature
Storage, Temperature
T
j
-55 to +150
Tstg
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = -1.0 mAdc, I =0)
V
-25
Vdc
Vdc
C
B
(BR)CEO
-
-
-40
-5
Collector-Base Breakdown Voltage (I = -100 uAdc, I =0)
V
V
C
E
(BR)CBO
Vdc
Emitter-Base Breakdown Voltage (I = -100 uAdc, I =0)
(BR)EBO
E
C
uAdc
I
I
CE0
-0.1
-0.1
-0.1
Collector Cutoff Current (V = -20 Vdc, I =0)
-
-
CE
B
uAdc
uAdc
Collector Cutoff Current (V = -40 Vdc, I =0)
CB
CBO
EBO
E
-
I
Emitter Cutoff Current (V = -5.0V c, I =0)
d
EB
C
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