Image SI1926DL-T1-GE3
型号:

SI1926DL-T1-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 60v 370ma sot363
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SI1926DL-T1-GE3的详细信息

Datasheets:
SI1926DL:
Product Photos:
SOT-363 PKG:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: TrenchFET®
Packaging : Tape & Reel (TR)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 18.5pF @ 30V
Power - Max: 510mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-3 (SOT323)