Image SI2301BDS-T1-GE3
型号:

SI2301BDS-T1-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 20v 2.4A 0.9W 100mohm @ 4.5V
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SI2301BDS-T1-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 20 V
Vgs - Gate-Source Breakdown Voltage: 8 V
Id - Continuous Drain Current: 2.2 A
Rds On - Drain-Source Resistance: 100 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 700 mW
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 40 ns
Minimum Operating Temperature: - 55 C
Rise Time: 40 ns
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 30 ns
Part # Aliases: SI2301BDS-GE3