SIA483DJ-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 30 V |
Id - Continuous Drain Current: | - 12 A |
Rds On - Drain-Source Resistance: | 21 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | - 2.2 V |
Qg - Gate Charge: | 45 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 19 W |
Mounting Style: | SMD/SMT |
Package / Case: | PowerPAK SC-70-6 |
Packaging: | Reel |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 23 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 60 ns |
Series: | SIA4xxDJ |
Factory Pack Quantity: | 3000 |
Tradename: | PowerPAK, TrenchFET |
Typical Turn-Off Delay Time: | 25 ns |
扫码手机查看更方便
同类器件