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SIA936EDJ-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Breakdown Voltage: | 1.3 V |
Id - Continuous Drain Current: | 4.5 A |
Rds On - Drain-Source Resistance: | 34 mOhms |
Configuration: | Dual |
Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
Qg - Gate Charge: | 5.4 nC |
Pd - Power Dissipation: | 7.8 W |
Mounting Style: | SMD/SMT |
Package / Case: | SC-70-6 |
Packaging: | Reel |
Fall Time: | 20 ns |
Rise Time: | 20 ns |
Series: | SIA936 |
Typical Turn-Off Delay Time: | 45 ns |
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