Image SSM6J212FE(TE85L,F
型号:

SSM6J212FE(TE85L,F

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体FET - 单
描述: mosfet P-CH 20v 4A es6
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SSM6J212FE(TE85L,F的详细信息

Datasheets:
SSM6J212FE:
Mosfets Prod Guide:
Product Photos:
SSM6K202FE:
Product Training Modules:
Small Signal MOSFET:
Catalog Drawings:
ES6 Top:
ES6 Side:
Standard Package : 4,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) @ Vgs: 14.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 970pF @ 10V
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)
Dynamic Catalog: P-Channel Logic Level Gate FETs
Other Names: SSM6J212FE(TE85LFTRSSM6J212FETE85LF