Image STB11NM60N-1
型号:

STB11NM60N-1

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 600v 10a i2pak
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STB11NM60N-1的详细信息

Datasheets:
STx11NM60N:
Product Photos:
TO-262-3 Long Leads:
Standard Package : 50
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: MDmesh™ II
Packaging : Tube
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) @ Vds: 850pF @ 50V
Power - Max: 90W
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK