Image STB120N4LF6
型号:

STB120N4LF6

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: mosfet N-Ch 40v 3.1 ohm stripfet VI deepgate
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STB120N4LF6的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Yes
Brand: STMicroelectronics
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 4 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 1 V to 2.5 V
Qg - Gate Charge: 80 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 110 W
Mounting Style: SMD/SMT
Package / Case: D2PAK-2
Packaging: Reel
Minimum Operating Temperature: - 55 C
Series: STB120N4LF6
Factory Pack Quantity: 1000

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