STH110N10F7-2的详细信息
Manufacturer: | STMicroelectronics |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 110 A |
Rds On - Drain-Source Resistance: | 6.5 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 2 V to 4 V |
Qg - Gate Charge: | 60 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 150 W |
Mounting Style: | SMD/SMT |
Package / Case: | H2PAK-2 |
Packaging: | Reel |
Brand: | STMicroelectronics |
Minimum Operating Temperature: | - 55 C |
Series: | STH110N |
Factory Pack Quantity: | 1000 |
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