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STMicroelectronics 
STH3N150-2的详细信息
| Manufacturer： | STMicroelectronics |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 1.5 kV |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 2.5 A |
| Rds On - Drain-Source Resistance： | 9 Ohms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 4 V |
| Qg - Gate Charge： | 29.3 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 140 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | H2PAK-2 |
| Packaging： | Reel |
| Brand： | STMicroelectronics |
| Fall Time： | 61 ns |
| Forward Transconductance - Min： | 2.6 S |
| Minimum Operating Temperature： | - 50 C |
| Rise Time： | 47 ns |
| Series： | STH3N150-2 |
| Factory Pack Quantity： | 1000 |
| Typical Turn-Off Delay Time： | 45 ns |
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