STI10NM60N的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Breakdown Voltage: | 25 V |
Id - Continuous Drain Current: | 10 A |
Rds On - Drain-Source Resistance: | 550 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 19 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 70 W |
Mounting Style: | Through Hole |
Package / Case: | I2PAK-3 |
Packaging: | Tube |
Brand: | STMicroelectronics |
Fall Time: | 15 ns |
Minimum Operating Temperature: | - 50 C |
Rise Time: | 12 ns |
Series: | STI10NM60N |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 32 ns |
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