Image STP315N10F7
型号:

STP315N10F7

厂商: STMicroelectronics STMicroelectronics
分类: 半导体分离式半导体
描述: mosfet automotive N-channel 100 V, 2.3 mohm typ., 180 A stripfet(TM) VI deepgate(TM) power mosfet in a TO-220 package
报错 收藏

Datasheet下载地址

本地下载 >> 第三方平台下载 >>

STP315N10F7的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 180 A
Rds On - Drain-Source Resistance: 2.3 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Qg - Gate Charge: 180 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 315 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Brand: STMicroelectronics
Ciss - Input Capacitance: 12800 pF
Fall Time: 40 ns
Minimum Operating Temperature: - 55 C
Rise Time: 108 ns
Typical Turn-Off Delay Time: 148 ns