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STMicroelectronics 
STW56NM60N的详细信息
| Manufacturer： | STMicroelectronics |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 600 V |
| Vgs - Gate-Source Breakdown Voltage： | 25 V |
| Id - Continuous Drain Current： | 28 A |
| Rds On - Drain-Source Resistance： | 60 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 4 V |
| Qg - Gate Charge： | 150 nC |
| Pd - Power Dissipation： | 300 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-247-3 |
| Packaging： | Tube |
| Brand： | STMicroelectronics |
| Series： | STW56NM60N |
| Factory Pack Quantity： | 30 |
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