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TGF2819-FL的详细信息
Manufacturer: | TriQuint |
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Product Category: | Transistors RF JFET |
RoHS: | Yes |
Type: | GaN SiC HEMT |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 32 V |
Vgs - Gate-Source Breakdown Voltage: | - 2.9 V |
Maximum Drain Gate Voltage: | 145 V |
Id - Continuous Drain Current: | 7.32 A |
Frequency: | 3.5 GHz |
Gain: | 14 dB |
Pd - Power Dissipation: | 86 W |
Maximum Operating Temperature: | + 85 C |
Mounting Style: | Screw |
Packaging: | Tray |
Brand: | TriQuint Semiconductor |
Configuration: | Single |
Development Kit: | TGF2819-FS/FL, EVAL BOARD |
Minimum Operating Temperature: | - 40 C |
Operating Temperature Range: | - 40 C to + 85 C |
Part # Aliases: | 1118709 772-TGF2819-FS-EVB1 |
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