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TK35N65W,S1F的详细信息
| Manufacturer： | Toshiba |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 650 V |
| Vgs - Gate-Source Breakdown Voltage： | 30 V |
| Id - Continuous Drain Current： | 35 A |
| Rds On - Drain-Source Resistance： | 68 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 2.5 V to 3.5 V |
| Qg - Gate Charge： | 100 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 270 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-247-3 |
| Brand： | Toshiba |
| Channel Mode： | Enhancement |
| Minimum Operating Temperature： | - 55 C |
| Factory Pack Quantity： | 30 |
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