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TPN13008NH,L1Q的详细信息
Manufacturer: | Toshiba |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 40 A |
Rds On - Drain-Source Resistance: | 13.3 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 18 nC |
Pd - Power Dissipation: | 42 W |
Mounting Style: | SMD/SMT |
Package / Case: | TSON Advance-8 |
Packaging: | Reel |
Brand: | Toshiba |
Channel Mode: | Enhancement |
Fall Time: | 5 ns |
Rise Time: | 4.5 ns |
Typical Turn-Off Delay Time: | 18 ns |
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