Image ZXTP2012GTA
型号:

ZXTP2012GTA

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt 60v pnp low sat
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ZXTP2012GTA的详细信息

Manufacturer: Diodes Incorporated
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: Diodes Incorporated
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 100 V
Collector- Emitter Voltage VCEO Max: - 60 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: - 195 mV
Maximum DC Collector Current: 5.5 A
Gain Bandwidth Product fT: 120 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-223
Continuous Collector Current: - 5.5 A
DC Collector/Base Gain hfe Min: 100 at 10 mA at 1 V, 100 at 2 A at 1 V, 45 at 5 A at 1 V, 10 at 10 A at 1 V
DC Current Gain hFE Max: 100
Maximum Power Dissipation: 3 W
Minimum Operating Temperature: - 55 C
Packaging: Reel
Factory Pack Quantity: 1000

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