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STGD3HF60HDT4 |
STMicroelectronics |
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半导体
分离式半导体
|
igbt transistors 4.5 A 600v igbt 20v vge 25a ifsm |
|
TPS61080DRCR |
Texas Instruments |
|
半导体
集成电路 - IC
|
led lighting drivers high vge DC/DC boost converter |
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TPS61081DRCT |
Texas Instruments |
|
半导体
集成电路 - IC
|
led lighting drivers high vge DC/DC boost converter |
|
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TPS61080DRCT |
Texas Instruments |
|
半导体
集成电路 - IC
|
led lighting drivers high vge DC/DC boost converter |
|
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TPS61081DRCR |
Texas Instruments |
|
半导体
集成电路 - IC
|
led lighting drivers high vge DC/DC boost converter |
|
ISL29101IROZ-T7A |
Intersil Corporation |
|
光电子
光学探测器和传感器
|
optical sensors - light To frequency & light To voltage isl29101irozfree sml LW pwr vge-otpt |
|
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ISL29102IROZ-T7 |
Intersil Corporation |
|
光电子
光学探测器和传感器
|
optical sensors - light To frequency & light To voltage isl29102irozfree sml LW pwr vge-otpt |
|
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ISL29101IROZ-T7 |
Intersil Corporation |
|
光电子
光学探测器和传感器
|
optical sensors - light To frequency & light To voltage isl29101irozfree sml LW pwr vge-otpt |
|
IRG4BC40S |
International Rectifier |
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半导体
|
insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.32v, @vge=15v, Ic=31a) |
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IRG4PC40 |
International Rectifier |
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半导体
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.50v, @vge=15v, Ic=27a) |
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IRG4PC40KD |
International Rectifier |
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半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.1V, @vge=15v, Ic=25a) |
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IRG4PC40S |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.32v, @vge=15v, Ic=31a) |
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IRG4PC40UD |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode( vces=600v, vce(on)typ.=1.72v, @vge=15v, Ic=20a) |
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IRG4PC50FD |
International Rectifier |
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.45v, @vge=15v, Ic=39a) |
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IRG4BC30US |
International Rectifier |
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insulated gate bipolar transistor ultrafast speed igbt(vces=600v, vce(on)typ. = 1.95v, @vge=15v, Ic=12a) |
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IRG4BC20KDS |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.27v, @vge=15v, Ic=9.0A) |
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IRG4BC20KS |
International Rectifier |
|
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.27v, @vge=15v, Ic=9.0A) |
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IRG4BC20MD-S |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.85v, @vge=15v, Ic=11a) |
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IRG4BC30KDS |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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IRG4BC30KS |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
