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型号:

TPC8A06-H(TE12LQM)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体FET - 单
描述: mosfet N-CH sbd 30v 12a 8sop
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TPC8A06-H(TE12LQM)的详细信息

Datasheets:
Mosfets Prod Guide:
Product Photos:
8-SOIC:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Schottky, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) @ Vds: 1800pF @ 10V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)
Other Names: TPC8A06HTE12LQM