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图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
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K4S560832D-TC7A |
Samsung semiconductor |
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32mx64 sdram dimm based on 32mx8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
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K4S560832C-TC/L1L |
Samsung semiconductor |
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256mbit Sdram 8M x 8bit x 4 banks synchronous dram lvttl |
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K4S560832D-TL1H |
Samsung semiconductor |
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32mx64 sdram dimm based on 32mx8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
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K4S560832C-TC/L75 |
Samsung semiconductor |
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256mbit Sdram 8M x 8bit x 4 banks synchronous dram lvttl |
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K4S560832D-TC/L7C |
Samsung semiconductor |
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256mbit Sdram 8M x 8bit x 4 banks synchronous dram lvttl |
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K4S560832D-TC7C |
Samsung semiconductor |
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32mx64 sdram dimm based on 32mx8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
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K4S560832D-TC1H |
Samsung semiconductor |
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32mx64 sdram dimm based on 32mx8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
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K4S560832D-TL7A |
Samsung semiconductor |
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32mx64 sdram dimm based on 32mx8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
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K4S563233F |
Samsung semiconductor |
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2M x 32bit x 4 banks mobile sdram in 90fbga |
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K4S510832B-UC75 |
Samsung semiconductor |
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512mb B-die sdram specification |
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K4S510832B-TCL75 |
Samsung semiconductor |
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512mb B-die sdram specification |
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K4S510832M-TC75 |
Samsung semiconductor |
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16m x 8bit x 4 banks synchronous dram lvttl |
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K4S510832M-TL1L |
Samsung semiconductor |
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16m x 8bit x 4 banks synchronous dram lvttl |
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K4S510832M-TC1L |
Samsung semiconductor |
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16m x 8bit x 4 banks synchronous dram lvttl |
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K4S510432M-TC1L |
Samsung semiconductor |
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512mbit Sdram 32m x 4bit x 4 banks synchronous dram lvttl |
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K4S510832M-TL75 |
Samsung semiconductor |
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16m x 8bit x 4 banks synchronous dram lvttl |
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K4S511533F-F1H |
Samsung semiconductor |
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8M x 16bit x 4 banks mobile sdram in 54fbga |
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K4S510832M-TC1H |
Samsung semiconductor |
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16m x 8bit x 4 banks synchronous dram lvttl |
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K4S510832M-TL1H |
Samsung semiconductor |
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16m x 8bit x 4 banks synchronous dram lvttl |
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K4S511533F-L |
Samsung semiconductor |
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8M x 16bit x 4 banks mobile sdram in 54fbga |
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