关键词21v
- 标准
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| 图片 | 型号 | 厂商 | 标准 | 分类 | 描述 |
|---|---|---|---|---|---|
|
IRG4BC30KS | International Rectifier | insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) | ||
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IRG4BC30KS_04 | International Rectifier | insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) | ||
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IRG4BC30K-S_04 | International Rectifier | insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) | ||
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IRG4BC30KD | International Rectifier | |
半导体 | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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IRG4BC30KD-S | International Rectifier | |
半导体 | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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TPS7A4501 | Texas Instruments | |
半导体 | single output ldo, 1.5A, adj. (1.21v to 20v), low noise, fast transient response 6-sot-223 -40 to 125 |
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TL1963A-Q1 | Texas Instruments | 半导体 电源管理 | auto catalog single output ldo, 1.5A, adj. (1.21v to 20v), fast transient response 5-ddpak/TO-263 -40 to 125 |
