图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
RN2302,LF |
Toshiba |
 |
半导体
分离式半导体
|
transistors switching - resistor biased bias resistor pnp 10kohm -100ma -50v |
|
RN2401S,LF(D |
Toshiba |
 |
半导体
分离式半导体
|
transistors switching - resistor biased bias resistor built- in transistor (brt) |
|
RN2402,LF |
Toshiba |
 |
半导体
分离式半导体
|
transistors switching - resistor biased bias resistor pnp 10kohm -100ma -50v |
|
DDTA123YCA-7-F |
Diodes Incorporated |
  |
半导体
分离式半导体
|
transistors switching - resistor biased pre-bias pnp 200mw |
|
DDTC123EE-7-F |
Diodes Incorporated |
  |
半导体
分离式半导体
|
transistors switching - resistor biased pre-bias npn 150mw |
|
RN1119MFV(TPL3) |
Toshiba |
 |
半导体
分离式半导体
|
transistors switching - resistor biased bias resistor |
|
SEP0640Q38CB |
Littelfuse Inc |
  |
半导体
分离式半导体
|
sidacs sep ethernet 100a biasd protec. device |
|
SEP0080Q38CB |
Littelfuse Inc |
  |
半导体
分离式半导体
|
sidacs sep ethernet 100a biasd protec. device |
|
SEP0720Q38CB |
Littelfuse Inc |
  |
半导体
分离式半导体
|
sidacs sep ethernet 100a biasd protec. device |
|
SEP0300Q38CB |
Littelfuse Inc |
  |
半导体
分离式半导体
|
sidacs sep ethernet 100a biasd protec. device |
|
MAXREFDES39# |
Maxim Integrated |
  |
嵌入式解决方案
评估和演示板和套件
|
ref design PA biasing/monitoring |
|
BB502MBS-TL-E |
Renata |
|
|
built in biasing circuit mos fet IC uhf RF amplifier |
|
AN0010 |
RF Micro Devices |
|
|
evaluation board assembly biasing configuration |
|
BB501MAS-TL-E |
Renata |
|
|
built in biasing circuit mos fet IC uhf RF amplifier |
|
AN3100 |
Freescale Semiconductor |
|
|
general purpose amplifier biasing |
|
BB503MCS-TL-E |
Renata |
|
|
built in biasing circuit mos fet IC uhf RF amplifier |
|
BB301MAW-TL-E |
Renata |
|
|
built in biasing circuit mos fet IC vhf RF amplifier |
|
BB101C |
Renata |
|
|
built in biasing circuit mos fet IC uhf RF amplifier |
|
BB101MAU-TL-E |
Renata |
|
|
built in biasing circuit mos fet IC uhf RF amplifier |
|
BB101CAU-TL-E |
Renata |
|
|
built in biasing circuit mos fet IC uhf RF amplifier |