|   | PBRN123YK | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? | 
    |   | PBRN123YS | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? | 
    |   | PBRN123YT | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? | 
    |   | PBRN123Y | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? | 
    |   | PBRN123ES | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? | 
    |   | BCV62B | NXP Semiconductors |   | 半导体 | low vcesat (biss) transistors | 
    |   | BCM62B | NXP Semiconductors |   | 半导体 | low vcesat (biss) transistors | 
    |   | BCM61B | NXP Semiconductors |   | 半导体 | low vcesat (biss) transistors | 
    |   | BCV61A | NXP Semiconductors |   | 半导体 | low vcesat (biss) transistors | 
    |   | PBRN113E | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? | 
    |   | PBRN113ES | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? | 
    |   | PBRN113ET | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? | 
    |   | PBRN113ZK | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? | 
    |   | PBRN113ZT | NXP Semiconductors |  |  | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? | 
    |   | PBRN113EK | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? | 
    |   | PBRN113Z | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? | 
    |   | PBRN113ZS | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? | 
    |   | PBSS4350T | NXP Semiconductors |   | 半导体 | 50 V; 3 A npn low vcesat (biss) transistor | 
    |   | PBSS4350SPN | NXP Semiconductors |  |  | 50 V, 2.7 A pnp/pnp low vcesat (biss) transistor | 
    |   | PBSS4330X | NXP Semiconductors |  |  | 30 V, 3 A npn low vcesat (biss) transistor |