|   | PMMT591A,235 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-11 | 
    |   | PMMT491A,235 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-11 | 
    |   | PBSS3540M,315 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-7 | 
    |   | PBSS4540X,135 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-13 | 
    |   | PBSS5350D,135 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-11 | 
    |   | PBSS4350D,135 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-11 | 
    |   | PBSS5240Y,135 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-11 | 
    |   | PBSS304NX,115 | NXP Semiconductors |   | 半导体
        
        分离式半导体 | transistors bipolar - bjt trans biss tape-7 | 
    |   | 3806620 | NXP Semiconductors |   | 附件
        
        分立元件分类套件 | kit biss transistors 17 values | 
    |   | PBHV8115T_08 | NXP Semiconductors |  |  | 150 V, 1 A npn high-voltage low vcesat (biss) transistor | 
    |   | PBHV8115Z_08 | NXP Semiconductors |  |  | 150 V, 1 A npn high-voltage low vcesat (biss) transistor | 
    |   | PBSS4420D | NXP Semiconductors |   | 半导体 | 20 V, 4 A npn low vcesat (biss) transistor | 
    |   | PBSS5160DS | NXP Semiconductors |   | 半导体 | 60 V, 1 A pnp/pnp low vcesat (biss) transistor | 
    |   | PBSS5160K | NXP Semiconductors |   | 半导体 | 60 V, 1 A pnp low vcesat (biss) transistor | 
    |   | PBSS5160U | NXP Semiconductors |   | 半导体 | 60 V, 1 A pnp low vcesat (biss) transistor | 
    |   | PBSS5420D | NXP Semiconductors |   | 半导体 | 20 V, 4 A pnp low vcesat (biss) transistor | 
    |   | PESD12VS2UT | NXP Semiconductors |   | 半导体 | low vcesat (biss) transistors | 
    |   | PBRN123ET | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? | 
    |   | PBRN123EK | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? | 
    |   | PBRN123E | NXP Semiconductors |   | 半导体 | npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? |