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M464S3254DTS-L1H/C1H |
Samsung semiconductor |
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32mx64 sdram sodimm based on 16mx16, 4banks, 8K refresh,3.3V synchronous drams with spd |
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M464S3254DTS-L1L/C1L |
Samsung semiconductor |
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32mx64 sdram sodimm based on 16mx16, 4banks, 8K refresh,3.3V synchronous drams with spd |
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M464S3254DTS-L7A/C7A |
Samsung semiconductor |
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32mx64 sdram sodimm based on 16mx16, 4banks, 8K refresh,3.3V synchronous drams with spd |
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M464S3254DTS-L7C/C7C |
Samsung semiconductor |
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32mx64 sdram sodimm based on 16mx16, 4banks, 8K refresh,3.3V synchronous drams with spd |
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TMS416809 |
Texas Instruments |
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2097152-word BY 8-bit high-speed drams |
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TMS416400 |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS416400P |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS417400 |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS417400P |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS426400 |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS426400P |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS427400 |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS427400P |
Texas Instruments |
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4194304-word BY 4-bit high-speed drams |
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TMS416169 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |
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TMS416169P-60 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |
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TMS416169P-70 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |
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TMS416169P-80 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |
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TMS418169 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |
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TMS418169P-60 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |
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TMS418169P-70 |
Texas Instruments |
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1048576-word BY 16-bit extended data out high-speed drams |