|   | RN1962FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans npn dual 50v 100ma es6 | 
    |   | RN1964FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans npn dual 50v 100ma es6 | 
    |   | RN1966FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans npn dual 50v 100ma es6 | 
    |   | RN1963FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans npn dual 50v 100ma es6 | 
    |   | RN1965FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans npn dual 50v 100ma es6 | 
    |   | RN1910FE(T5L,F,T) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual npn es6 50v 100a | 
    |   | RN4982FE(T5L,F,T) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual npn/ pnp 50v 100ma es6 | 
    |   | RN4984FE(T5L,F,T) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual npn/pnp 50v 100ma es6 | 
    |   | RN2901FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual pnp es6 -50v -100a | 
    |   | RN2911FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual pnp -50v -100a es6 | 
    |   | RN4902FE(TE85L,F) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual pnp/npn 50v 100ma es6 | 
    |   | RN4986FE(T5L,F,T) | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | tran dual npn/pnp 50v 100ma es6 | 
    |   | RN1905FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2npn 50v 100mw es6 | 
    |   | RN1907FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2npn 50v 100mw es6 | 
    |   | RN1910FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2npn 50v 100mw es6 | 
    |   | RN2902FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2pnp 50v 200mw es6 | 
    |   | RN2904FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2pnp 50v 100mw es6 | 
    |   | RN2905FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2pnp 50v 100mw es6 | 
    |   | RN2907FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2pnp 50v 100mw es6 | 
    |   | RN2910FE,LF(CT | Toshiba Semiconductor and Storage |   | 半导体
        
        晶体管(BJT) - 阵列﹐预偏压式 | trans prebias 2pnp 50v 100mw es6 |