|
NE3503M04-A |
CEL |
  |
半导体
分离式半导体
|
transistors RF Jfet low noise HJ fet |
|
NE3511S02-A |
CEL |
  |
半导体
分离式半导体
|
transistors RF jfet X to Ku band super low noise amp N-Ch |
|
BC850B,215 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise tape-7 |
|
2SD1816T-TL-E |
ON Semiconductor |
  |
半导体
分离式半导体
|
transistors bipolar - bjt HF low-noise amplifier |
|
BGA825L6SE6327XTSA1 |
Infineon Technologies |
 |
半导体
分离式半导体
|
transistors RF bipolar silicon germanium low noise amplifier |
|
1N4104 TR |
Central Semiconductor |
  |
半导体
分离式半导体
|
zener diodes .25w 5% Lw noise/lvl |
|
NE3509M04-A |
CEL |
  |
半导体
分离式半导体
|
transistors RF jfet L to S band Lo noise amplifier N-Ch Hjfet |
|
S2K100-5000 |
Shindengen |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching Hi voltage low noise |
|
2SD1816S-TL-E |
ON Semiconductor |
  |
半导体
分离式半导体
|
transistors bipolar - bjt HF low-noise amplifier |
|
1N4625-TR |
Central Semiconductor |
|
半导体
分离式半导体
|
zener diodes .25w 5% Lw noise/lvl |
|
SSM2212RZ-R7 |
Analog Devices Inc |
  |
半导体
分离式半导体
|
transistors bipolar - bjt low noise matched dual npn |
|
BC850BW,135 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC849CW,135 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC849BW,135 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC850B,235 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC850CW,135 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC849B,235 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC849C,235 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
BC859C,235 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors bipolar - bjt trans low noise |
|
ATF-38143-TR1G |
Avago Technologies |
  |
半导体
分离式半导体
|
transistors RF jfet transistor gaas low noise |