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图片 型号 厂商 标准 分类 描述
Image: S10317 S10317 Hamamatsu Corporation photo IC for laser beam synchronous detection low voltage operation (3.3 V)
Image: S10317-01 S10317-01 Hamamatsu Corporation photo IC for laser beam synchronous detection low voltage operation (3.3 V)
Image: 109D167X0050K0 109D167X0050K0 Vishay Siliconix wet tantalum capacitors sintered anode tantalex? capacitors for operation to + 125 ？°C, elastomer-sealed
Image: AD7376AN10 AD7376AN10 Analog Devices Inc +-15 V operation digital potentiometer
Image: DS322 DS322 Spansion Inc 32 Megabit (4 M x 8-bit/2 M x 16-bit) cmos 1.8 volt-only, simultaneous operation flash memory
Image: DS323 DS323 Spansion Inc 32 Megabit (4 M x 8-bit/2 M x 16-bit) cmos 1.8 volt-only, simultaneous operation flash memory
Image: EX29LV160-70RTCI EX29LV160-70RTCI Excel Semiconductor Inc. 32mbit(4M x 8/2M x 16) cmos 3.0 volt-only, simultaneous operation flash memory
Image: EX29LV160-70TC EX29LV160-70TC Excel Semiconductor Inc. 32mbit(4M x 8/2M x 16) cmos 3.0 volt-only, simultaneous operation flash memory
Image: EX29LV160-90RTCI EX29LV160-90RTCI Excel Semiconductor Inc. 32mbit(4M x 8/2M x 16) cmos 3.0 volt-only, simultaneous operation flash memory
Image: EX29LV160-90TCI EX29LV160-90TCI Excel Semiconductor Inc. 32mbit(4M x 8/2M x 16) cmos 3.0 volt-only, simultaneous operation flash memory
Image: S10077 S10077 Hamamatsu Corporation cmos linear image sensor digital output, built-in 8/10-bit AD converter, single power supply operation
Image: 1N4105 1N4105 Compensated Deuices Incorporated low current operation AT 250 uA
Image: 1N4105-1 1N4105-1 Compensated Deuices Incorporated low current operation AT 250 uA
Image: 1N4110-1 1N4110-1 Compensated Deuices Incorporated low current operation AT 250 uA
Image: 1N4111 1N4111 Compensated Deuices Incorporated low current operation AT 250 uA
Image: DS324 DS324 Spansion Inc 32 Megabit (4 M x 8-bit/2 M x 16-bit) cmos 1.8 volt-only, simultaneous operation flash memory
Image: NE5500179A NE5500179A California Eastern Labs 4.8 V operation silicon RF power mosfet for gsm1800 and gsm1900 transmission amplifiers
Image: NE5500179A-T1 NE5500179A-T1 California Eastern Labs 4.8 V operation silicon RF power mosfet for gsm1800 and gsm1900 transmission amplifiers
Image: NE5510179A NE5510179A NEC 3.5V operation silicon RF power mosfet for 1.9 ghz transmission amplifiers
Image: NE5510179A NE5510179A California Eastern Labs 3.5 V operation silicon RF power mosfet for 1.9 ghz transmission amplifiers

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