|   | KMM5328100CKG | Samsung semiconductor |  |  | 8M x 32 dram simm using 4mx4, 4K/2K refresh, 5V | 
    |   | KMM5328000CKG | Samsung semiconductor |  |  | 8M x 32 dram simm using 4mx4, 4K/2K refresh, 5V | 
    |   | KMM53216000CKG | Samsung semiconductor |  |  | 16m x 32 dram simm using 16mx4, 4K refresh, 5V | 
    |   | KMM53232000CKG | Samsung semiconductor |  |  | 32m x 32 dram simm using 16mx4, 4K refresh, 5V | 
    |   | KMM53616000CKG | Samsung semiconductor |  |  | 16m x 36 dram simm using 16mx4 & 16mx1, 4K refresh, 5V | 
    |   | KMM53632000CKG | Samsung semiconductor |  |  | 32m x 36 dram simm using 16mx4 & 16mx1, 4K refresh, 5V | 
    |   | HYB314171BJ-50 | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB314171BJ-50- | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB314171BJ-60 | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB314171BJ-70 | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB314171BJL-50 | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB314171BJL-60 | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB314171BJL-70 | Siemens Semiconductor Group |  |  | 3.3V 256 K x 16-bit dynamic ram 3.3V low power 256 K x 16-bit dynamic ram with self refresh | 
    |   | HYB5116405BJ-70 | Siemens Semiconductor Group |  |  | 4M x 4-bit dynamic ram 2k & 4k refresh | 
    |   | HYB5116405BJ-50 | Siemens Semiconductor Group |  |  | 4M x 4-bit dynamic ram 2k & 4k refresh | 
    |   | HYB5116405BJ-50- | Siemens Semiconductor Group |  |  | 4M x 4-bit dynamic ram 2k & 4k refresh | 
    |   | HYB5116405BJ-60 | Siemens Semiconductor Group |  |  | 4M x 4-bit dynamic ram 2k & 4k refresh | 
    |   | MT4C4001JTG-7 | Micron Technology Inc |  |  | standard or self refresh | 
    |   | MT4C4001JTG-8 | Micron Technology Inc |  |  | standard or self refresh | 
    |   | KMM372F213CK | Samsung semiconductor |  |  | 2M x 72 dram dimm with ecc using 2mx8, 2K refresh, 3.3V |