图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
HM5118165LJ-7 |
Hitachi Semiconductor |
|
|
16m edo dram (1-mword x 16-bit) 1 k refresh |
|
HM5117805TS-5 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5117805TS-6 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5117805TS-7 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5117805TT-5 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5118165TT-5 |
Hitachi Semiconductor |
|
|
16m edo dram (1-mword x 16-bit) 1 k refresh |
|
HM5117805TT-6 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5118165TT-6 |
Hitachi Semiconductor |
|
|
16m edo dram (1-mword x 16-bit) 1 k refresh |
|
HM5117805TT-7 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5118165TT-7 |
Hitachi Semiconductor |
|
|
16m edo dram (1-mword x 16-bit) 1 k refresh |
|
HM5117805LS-5 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5117805LS-6 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HM5117805LS-7 |
Elpida Memory |
|
|
16 M edo dram (2-mword X 8-bit) 2 k refresh |
|
HYB5116405BT-70 |
Siemens Semiconductor Group |
|
|
4M x 4-bit dynamic ram 2k & 4k refresh |
|
HM5118165J-6 |
Hitachi Semiconductor |
|
|
16m edo dram (1-mword x 16-bit) 1 k refresh |
|
HM5118165J-7 |
Hitachi Semiconductor |
|
|
16m edo dram (1-mword x 16-bit) 1 k refresh |
|
KMM5324000BSWG |
Samsung semiconductor |
|
|
4M x 32 dram simm using 4mx16, 4K refresh, 5V |
|
KMM5324004BSWG |
Samsung semiconductor |
|
|
4M x 32 dram simm using 4mx16, 4K refresh, 5V |
|
KMM5324004CSWG |
Samsung semiconductor |
|
|
4M x 32 dram simm using 4mx16, 4K refresh, 5V |
|
KMM5328004BSWG |
Samsung semiconductor |
|
|
8M x 32 dram simm using 4mx16, 4K refresh, 5V |