|   | KM6161002B-8 | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | KM6161002B | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | SPP02N80C3_08 | Infineon Technologies |  |  | coolmostm power transistor features new revolutionary high voltage technology | 
    |   | SPD02N80C3_08 | Infineon Technologies |  |  | coolmostm power transistor features new revolutionary high voltage technology | 
    |   | KM6161002A-15 | Samsung semiconductor |  |  | 64k x 16 bit speed static ram (5V operating), revolutionary pin out | 
    |   | KM6161002BI-8 | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | KM6161002B-10 | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | KM6161002A | Samsung semiconductor |  |  | 64k x 16 bit speed static ram (5V operating), revolutionary pin out | 
    |   | KM6161002AI-20 | Samsung semiconductor |  |  | 64k x 16 bit speed static ram (5V operating), revolutionary pin out | 
    |   | KM6161002BI | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | KM6161002BI-12 | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | KM6161002BI-10 | Samsung semiconductor |  |  | 64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. | 
    |   | SPN01N60C3_05 | Infineon Technologies |  |  | new revolutionary high voltage technology ultra low gate charge extreme dv/dt rated | 
    |   | SPD04N80C3_08 | Infineon Technologies |  |  | coolmostm power transistor features new revolutionary high voltage technology | 
    |   | SPP04N80C3_08 | Infineon Technologies |  |  | coolmostm power transistor features new revolutionary high voltage technology | 
    |   | SPB11N60S5_05 | Infineon Technologies |  |  | new revolutionary high voltage technology ultra low gate charge | 
    |   | SPB12N50C3_05 | Infineon Technologies |  |  | new revolutionary high voltage technology worldwide best rds(on) in TO 220 ultra low gate charge | 
    |   | SPP16N50C3_07 | Infineon Technologies |  |  | new revolutionary high voltage technology ultra low gate charge periodic avalanche rated | 
    |   | SPP16N50C3_09 | Infineon Technologies |  |  | new revolutionary high voltage technology ultra low gate charge periodic avalanche rated | 
    |   | SPP24N60C3_09 | Infineon Technologies |  |  | cool mos? power transistor feature new revolutionary high voltage technology |