|
DRC3114T0L |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DRC3144W0L |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
BAT 18-05 E6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
pin diodes silicon RF switching diode |
|
BAS21VD,135 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
diodes - general purpose, power, switching diode SW triple |
|
DMA261010R |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor GL wng 2.9x2.8mm |
|
MMBT589LT1G |
ON Semiconductor |
  |
半导体
分离式半导体
|
transistors bipolar - bjt 2A 30v switching pnp |
|
MCH3377-TL-E |
ON Semiconductor |
  |
半导体
分离式半导体
|
mosfet switching device |
|
DMG563H10R |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased comp trans W/blt IN res flt LD 2.0x2.1mm |
|
DMC561070R |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor flt LD 2.0x2.1mm |
|
DMA564040R |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor flt LD 2.0x2.1mm |
|
DMG563020R |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased comp trans W/blt IN res flt LD 2.0x2.1mm |
|
DMA5640M0R |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased comp trans W/blt IN res flt LD 2.0x2.1mm |
|
BGX 50A E6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
diodes - general purpose, power, switching AF diode 70v 0.14a |
|
DRC3144E0L |
Panasonic |
 |
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DA5S101K0R |
Panasonic |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching switch diode flt LD 1.6x1.6mm |
|
BAS 52-02V H6327 |
Infineon Technologies |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |
|
BCR 505 E6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
transistors switching - resistor biased npn silicon digital transistor |
|
BCR 503 E6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
transistors switching - resistor biased AF trans digital bjt npn 50v 500ma |
|
BCR 555 E6433 |
Infineon Technologies |
  |
半导体
分离式半导体
|
transistors switching - resistor biased pnp silicon digital transistor |
|
BAS 125-04W H6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |