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IRG4BC30WS |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.10v, @vge=15v, Ic=12a) |
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IRG4PC50UD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.65v, @vge=15v, Ic=27a) |
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IRG4PC50W |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)max.=2.30v, @vge=15v, Ic=27a) |
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IRG4BC20MDS |
International Rectifier |
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.85v, @vge=15v, Ic=11a) |
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IRG4BC20MD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.85v, @vge=15v, Ic=11a) |
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IRG4BC20SDS |
International Rectifier |
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.4V, @vge=15v, Ic=10a) |
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IRG4BC20UDS |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.85v, @vge=15v, Ic=6.5A) |
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IRG4BC30W_04 |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)max.=2.70v, @vge=15v, Ic=12a) |
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IRG4PC40W |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.05v, @vge=15v, Ic=20a) |
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IRG4PSH71 |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.97v, @vge=15v, Ic=42a) |
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IRG4PH30 |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=3.10v, @vge=15v, Ic=10a) |
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IRG4PH20 |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=3.17v, @vge=15v, Ic=5.0A) |
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IRG4PH50 |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.78v, @vge=15v, Ic=24a) |
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IRG4RC10 |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.39v, @vge=15v, Ic=5.0A) |
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IRG4PH40KD |
International Rectifier |
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.47v, @vge=15v, Ic=15a) |
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IRG4PH40U |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.43v, @vge=15v, Ic=21a) |
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IRG4PH40UD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.43v, @vge=15v, Ic=21a) |
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IRG4PH50K |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.77v, @vge=15v, Ic=24a) |
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IRG4PH50KD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.77v, @vge=15v, Ic=24a) |
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IRG4PH50S |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=1.47v, @vge=15v, Ic=33a) |
