关键词vceo
标准
为您共找出"260"个相关器件
图片 型号 厂商 标准 分类 描述
Image: RN1102MFV(TL3,T) RN1102MFV(TL3,T) Toshiba 半导体 分离式半导体 transistors switching - resistor biased 50v vcbo 50v vceo 100ma IC 150ma PC
Image: RN1110MFV(TL3,T) RN1110MFV(TL3,T) Toshiba 半导体 分离式半导体 transistors switching - resistor biased 50v vcbo 50v vceo 100ma IC 150ma PC
Image: RN1130MFV(TL3,T) RN1130MFV(TL3,T) Toshiba 半导体 分离式半导体 transistors switching - resistor biased 50v vcbo 50v vceo 100ma IC 150ma PC
Image: BC857BS-13-F BC857BS-13-F Diodes Incorporated 半导体 分离式半导体 diodes - general purpose, power, switching npn small sig -50v -45v vceo 6.0V vebo
Image: RN4905T5LFT RN4905T5LFT Toshiba 半导体 分离式半导体 transistors switching - resistor biased vcbo -50 vceo -50 IC -100ma -5V vebo
Image: RN1904(T5L,F,T) RN1904(T5L,F,T) Toshiba 半导体 分离式半导体 transistors switching - resistor biased 50v vcbo 50v vceo 100ma IC 200ma PC
Image: MMBT4403-G MMBT4403-G Comchip Technology 半导体 分离式半导体 transistors RF bipolar vceo=-40v IC=-600ma.
Image: HN1A01FU-Y(T5L,F,T HN1A01FU-Y(T5L,F,T Toshiba 半导体 分离式半导体 transistors bipolar - bjt vceo -50v IC -150ma hfe 120 - 400 200mw
Image: HN1B01FUGRLFT HN1B01FUGRLFT Toshiba 半导体 分离式半导体 transistors bipolar - bjt vceo 50v IC 150ma hfe 120 - 400 150ma
Image: MMBT2907A-G MMBT2907A-G Comchip Technology 半导体 分离式半导体 transistors RF bipolar vceo=60v IC=600ma
Image: MMBT2222A-G MMBT2222A-G Comchip Technology 半导体 分离式半导体 transistors RF bipolar vceo=40v IC=600ma
Image: MMBT5551-G MMBT5551-G Comchip Technology 半导体 分离式半导体 transistors RF bipolar vceo=160v IC=600ma
Image: MMBT2907A-HF MMBT2907A-HF Comchip Technology 半导体 分离式半导体 transistors RF bipolar vceo=60v IC=600ma
Image: DST3946DPJ-7 DST3946DPJ-7 Diodes Incorporated 半导体 分离式半导体 transistors bipolar - bjt npn/pnp 60v vcbo 40v vceo 6.0 vebo
Image: 2DB1182Q-13 2DB1182Q-13 Diodes Incorporated 半导体 分离式半导体 transistors bipolar - bjt 32v pnp trans -40v 10w -32v vceo -2A
Image: ZXTC6720MCTA ZXTC6720MCTA Diodes Incorporated 半导体 分离式半导体 transistors bipolar - bjt dual 80v npn 70v pnp vceo 80v rsat 68mohm
Image: ZXTP03200BGTA ZXTP03200BGTA Diodes Incorporated 半导体 分离式半导体 transistors bipolar - bjt 200v pnp low vce 2A Ic vceo -200v
Image: 2SA1163-BL(TE85L,F 2SA1163-BL(TE85L,F Toshiba 半导体 分离式半导体 transistors bipolar - bjt pnp trans -0.1A LN -120v vceo
Image: 2SA1954BTE85LF 2SA1954BTE85LF Toshiba 半导体 分离式半导体 transistors bipolar - bjt pnp trans -0.5A LN -12v vceo
Image: RN1114(T5L,F,T) RN1114(T5L,F,T) Toshiba 半导体 分离式半导体 transistors switching - resistor biased brt npn single 100ma IC 50v vceo

©2000-  21IC电子网版权所有

京ICP备11013301号 京公网安备 11010802024343号