关键词write
标准
为您共找出"500+"个相关器件
图片 型号 厂商 标准 分类 描述
Image: HY29DS163 HY29DS163 Hynix Semiconductor 16 megabit (2M x 8/1M x 16) super-low voltage, dual bank, simultaneous read/write, flash memory
Image: HY29DS162TF-12 HY29DS162TF-12 Hynix Semiconductor 16 megabit (2M x 8/1M x 16) super-low voltage, dual bank, simultaneous read/write, flash memory
Image: HY29DS163BF-13 HY29DS163BF-13 Hynix Semiconductor 16 megabit (2M x 8/1M x 16) super-low voltage, dual bank, simultaneous read/write, flash memory
Image: LC321664AJ LC321664AJ Sanyo Semicon Device 1 meg (65536 words X 16 bits) dram fast page mode, byte write
Image: LC321664AM LC321664AM Sanyo Semicon Device 1 meg (65536 words X 16 bits) dram fast page mode, byte write
Image: ATA556711N-DDB ATA556711N-DDB Atmel multifunctional 330-bit read/write RF identification IC
Image: 24C256 24C256 Fairchild Semiconductor 256 kbit 2-wire bus interface serial eeprom with write protect
Image: ATA556701N-DDB ATA556701N-DDB Atmel multifunctional 330-bit read/write RF identification IC
Image: ATA556701N-DDT1 ATA556701N-DDT1 Atmel multifunctional 330-bit read/write RF identification IC
Image: ATA556714N-DDT1 ATA556714N-DDT1 Atmel multifunctional 330-bit read/write RF identification IC
Image: ATA5575M1 ATA5575M1 Atmel read/write LF rfid idic 100 khz to 150 khz
Image: LC321664AT-80 LC321664AT-80 Sanyo Semicon Device 1 meg (65536 words X 16 bits) dram fast page mode, byte write
Image: MM54C89J MM54C89J Texas Instruments 64-bit tri-state random access read/write memory
Image: MM54C89N MM54C89N Texas Instruments 64-bit tri-state random access read/write memory
Image: MM54C89 MM54C89 Texas Instruments 64-bit tri-state random access read/write memory
Image: S29PL127N80GFW003 S29PL127N80GFW003 Spansion Inc 256/128/128 Mb (16/8/8 M x 16-bit) cmos, 3.0 volt-only simultaneous read/write, page-mode flash memory
Image: S29PL127N80GFI002 S29PL127N80GFI002 Spansion Inc 256/128/128 Mb (16/8/8 M x 16-bit) cmos, 3.0 volt-only simultaneous read/write, page-mode flash memory
Image: SY605JCTR SY605JCTR Micrel Inc 125mhz write programmable timing edge vernier
Image: S29PL127N80FFWW03 S29PL127N80FFWW03 Spansion Inc 256/128/128 Mb (16/8/8 M x 16-bit) cmos, 3.0 volt-only simultaneous read/write, page-mode flash memory
Image: S29PL127N80GAWW02 S29PL127N80GAWW02 Spansion Inc 256/128/128 Mb (16/8/8 M x 16-bit) cmos, 3.0 volt-only simultaneous read/write, page-mode flash memory

©2000-  21IC电子网版权所有

京ICP备11013301号 京公网安备 11010802024343号