| 
    RA60H1317M-E01 | 
    Mitsubishi Electric | 
     | 
    
        
             | 
    135-175mhz 60w 12.5V mobile radio  | 
    
       
    
                 
              
         
             | 
    RA60H1317M-01 | 
    Mitsubishi Electric | 
     | 
    
        
             | 
    135-175mhz 60w 12.5V mobile radio  | 
    
       
    
                 
              
         
             | 
    RD12MVP1 | 
    Mitsubishi Electric | 
     | 
    
        
             | 
    silicon mosfet power transistor, 175mhz, 10w  | 
    
       
    
                 
              
         
             | 
    RD12MVS1 | 
    Mitsubishi Electric | 
     | 
    
        
             | 
    rohs compliance, silicon mosfet power transistor, 175mhz, 12w  | 
    
       
    
                 
              
         
             | 
    ICS3002AI40 | 
    Integrated Device Technology | 
     | 
    
        
             | 
    175mhz, femtoclocktm vcxo based sonet/sdh jitter attenuator  | 
    
       
    
                 
              
         
             | 
    NTE360 | 
    NTE Electronics | 
     | 
    
        
             | 
    silicon npn transistor RF power output PO = 40w @ 175mhz  | 
    
       
    
                 
              
         
             | 
    NTE344 | 
    NTE Electronics | 
     | 
    
        
             | 
    silicon npn transistor RF power output PO = 30w @ 175mhz  | 
    
       
    
                 
              
         
             | 
    NTE357 | 
    NTE Electronics | 
     | 
    
        
             | 
    silicon npn transistor RF power output PO = 7W @ 175mhz  | 
    
       
    
                 
              
         
             | 
    NTE16002 | 
    NTE Electronics | 
     | 
    
        
             | 
    silicon npn transistor RF power output, PO = 13.5W, 175mhz  | 
    
       
    
                 
              
         
             | 
    NTE16003 | 
    NTE Electronics | 
     | 
    
        
             | 
    silicon npn transistor RF power output, PO = 7W, 175mhz  | 
    
       
    
                 
              
         
             | 
    B30-12 | 
    ETC | 
     | 
    
        
             | 
    30watts - 12.5 volts 150-175mhz  | 
    
       
    
                 
              
         
             | 
    D5007UK | 
    Semelab / TT electronics | 
     | 
    
        
             | 
    gold metallised multi-purpose silicon dmos RF fet 150w - 50v - 175mhz single ended  | 
    
       
    
                 
              
         
             | 
    ICS843002AKI-40 | 
    Integrated Circuit Systems | 
     | 
    
        
             | 
    175mhz, femtoclocks-TM vcxo based sonet/sdh jitter attenuator  | 
    
       
    
                 
              
         
             | 
    ICS843002AKI-40T | 
    Integrated Circuit Systems | 
     | 
    
        
             | 
    175mhz, femtoclocks-TM vcxo based sonet/sdh jitter attenuator  | 
    
       
    
                 
              
         
             | 
    ICS843002I-40 | 
    Integrated Circuit Systems | 
     | 
    
        
             | 
    175mhz, femtoclocks-TM vcxo based sonet/sdh jitter attenuator  | 
    
       
    
                 
              
         
             | 
    RD15HVF1 | 
    Mitsubishi Electric | 
     | 
    
        
             | 
    RF power mos fet silicon mosfet power transistor, 175mhz520mhz,15w  | 
    
       
    
                 
              
         
             | 
    RD15HVF1_08 | 
    Mitsubishi Electric | 
     | 
    
        
             | 
    RF power mos fet silicon mosfet power transistor, 175mhz520mhz,15w  |