| 
    N74F50109D | 
    NXP Semiconductors | 
     | 
    
        
             | 
    synchronizing dual J-K positive edge-triggered flip-flop with metastable immune characteristics  | 
    
       
    
                 
              
         
             | 
    N74F50109N | 
    NXP Semiconductors | 
     | 
    
        
             | 
    synchronizing dual J-K positive edge-triggered flip-flop with metastable immune characteristics  | 
    
       
    
                 
              
         
             | 
    SD210DET | 
    Linear Integrated Systems | 
     | 
    
        
             | 
    N-channel lateral dmos jfet switch typical characteristics  | 
    
       
    
                 
              
         
             | 
    MD9745APZ-F | 
    Knowles Electronics | 
     | 
    
        
             | 
    electrical characteristics test condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20?°C, RH=65%)  | 
    
       
    
                 
              
         
             | 
    SMBJ10A | 
    RFE international | 
     | 
    
        
             | 
    surface mount tvs diode electrical characteristics, 5.0 to 30 volts  | 
    
       
    
                 
              
         
             | 
    RNCJ2152BSR36 | 
    Vishay Siliconix | 
     | 
    
        
             | 
    metal film resistors, military/established reliability, mil-prf-55182 qualified, type rnc, characteristics J, H, K  | 
    
       
    
                 
              
         
             | 
    SMBJ10 | 
    RFE international | 
     | 
    
        
             | 
    surface mount tvs diode electrical characteristics, 5.0 to 30 volts  | 
    
       
    
                 
              
         
             | 
    XP161A02A1PR | 
    Torex Semiconductor Ltd | 
     | 
    
        
             | 
    N-channel power mos fet with low on-state resistance and ultra high-speed switching characteristics.  | 
    
       
    
                 
              
         
             | 
    1N5520B-1 | 
    Compensated Deuices Incorporated | 
     | 
    
        
             | 
    low reverse leakage characteristics  | 
    
       
    
                 
              
         
             | 
    XQ5VLX110T | 
    Xilinx Inc | 
     | 
    
        
             | 
    DC and switching characteristics  | 
    
       
    
                 
              
         
             | 
    MB6013ABC-2 | 
    Knowles Electronics | 
     | 
    
        
             | 
    electrical characteristics test condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20?°C, RH=65%)  | 
    
       
    
                 
              
         
             | 
    RD10JS | 
    NEC | 
     | 
    
        
             | 
    DO-34 package low noise, sharp breakdown characteristics 400 mW zener diode  | 
    
       
    
                 
              
         
             | 
    MB6013ASC-1 | 
    Knowles Electronics | 
     | 
    
        
             | 
    electrical characteristics test condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20?°C, RH=65%)  | 
    
       
    
                 
              
         
             | 
    FGL40N150 | 
    Fairchild Semiconductor | 
     | 
    
        
             | 
    electrical characteristics of the igbt  | 
    
       
    
                 
              
         
             | 
    FGL40N150D | 
    Fairchild Semiconductor | 
     | 
    
        
             | 
    electrical characteristics of the igbt  | 
    
       
    
                 
              
         
             | 
    SFH3310 | 
    OSRAM GmbH | 
     | 
    
        
             | 
    silicon npn phototransistor with Vル characteristics  | 
    
       
    
                 
              
         
             | 
    SFH2430 | 
    OSRAM GmbH | 
     | 
    
        
             | 
    silicon photodiode with Vル characteristics  | 
    
       
    
                 
              
         
             | 
    MB6052ASC-1 | 
    Knowles Electronics | 
     | 
    
        
             | 
    electrical characteristics test condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20?°C, RH=65%)  | 
    
       
    
                 
              
         
             | 
    MD6052ASZ-2 | 
    Knowles Electronics | 
     | 
    
        
             | 
    electrical characteristics test condition (Vs= 3 . 0 V, RL= 2 . 2 k ohm, Ta=20?°C, RH=65%)  | 
    
       
    
                 
              
         
             | 
    SA75A | 
    RFE international | 
     | 
    
        
             | 
    tvs diode electrical characteristics SA & 5kp series: 5 to 180 volts  |