图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
IXBT24N170 |
IXYS |
 |
半导体
分离式半导体
|
mosfet Bimosfets/reverse conducting igbts |
|
TISP61089DR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP61089BDR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP6NTP2CDR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs quad buffered pgate forward conducting |
|
TISP61089HDMR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP5080H3BJR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
sidacs forward conducting unidirectional |
|
TISP5070H3BJR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
sidacs forward conducting unidirectional |
|
TISP61089ADR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP6NTP2ADR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs quad buffered pgate forward conducting |
|
TISP5115H3BJR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
sidacs forward conducting unidirectional |
|
TISP6L7591DR-S |
Bourns Inc. |
 |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP61089SDR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP61521DR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP5150H3BJR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
sidacs forward conducting unidirectional |
|
TISP5095H3BJR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
sidacs forward conducting unidirectional |
|
TISP5110H3BJR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
sidacs forward conducting unidirectional |
|
TISP61511DR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP61089ASDR-S |
Bourns Inc. |
  |
半导体
分离式半导体
|
scrs dual P gate forward conducting |
|
TISP5190H3BJ |
Bourns Inc. |
 |
半导体
|
forward-conducting unidirectional thyristor overvoltage protectors |
|
TISP5190H3BJR |
Bourns Inc. |
 |
半导体
|
forward-conducting unidirectional thyristor overvoltage protectors |