|
MAX1321 |
Maxim Integrated |
  |
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1321ECM |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
MAX1322 |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1322ECM |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1324 |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1324ECM |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
MAX1325 |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1325ECM |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1326 |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
|
MAX1326ECM |
Maxim Integrated |
|
半导体
|
8-/4-/2-channel, 14-bit, simultaneous-sampling adcs with 10v, 5V, and 0 to +5V analog input ranges |
|
LTC1609 |
Linear Technology |
|
集成电路
|
16-bit, 200ksps, serial adc with multiple input ranges |
|
AN-60 |
Fairchild Semiconductor |
|
|
application note 60 (tmc22x5y input data ranges) |
|
|
K6R1004C1D-JC(I)10 |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1004C1D-JC(I)12 |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1004V1D-JC(I)08 |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1004V1D-JC(I)10 |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1008C1D-J(T)C(I)1... |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1008C1D-J(T)C(I)1... |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1008V1D-J(T)C(I)0... |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
|
|
K6R1008V1D-J(T)C(I)1... |
Samsung semiconductor |
|
|
64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges. |
