|
BGX 50A E6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
diodes - general purpose, power, switching AF diode 70v 0.14a |
|
DRC3144E0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DA5S101K0R |
Panasonic |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch diode flt LD 1.6x1.6mm |
|
BAS 52-02V H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |
|
BCR 505 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn silicon digital transistor |
|
BCR 503 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF trans digital bjt npn 50v 500ma |
|
BCR 555 E6433 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased pnp silicon digital transistor |
|
BAS 125-04W H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |
|
BAV70-E3-08 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70 volt 250ma 2.0 amp ifsm |
|
|
BAT 15-04W H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching RF diode |
|
BCR 133S H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF digital transistor |
|
DA6X102P0R |
Panasonic |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch diode GL wng 2.9x2.8mm |
|
|
DA6X109W0R |
Panasonic |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch diode GL wng 2.9x2.8mm |
|
DB2441700L |
Panasonic |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching schottky barrier diode |
|
RURD660S9A |
Fairchild Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 6A 600v |
|
MJB44H11T4 |
STMicroelectronics |
|
半导体
分离式半导体
|
transistors switching - resistor biased 80v low voltage npn 5V vebo 10a IC 50w |
|
STTH4R02SY |
STMicroelectronics |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching ultrafast recovery 4A 200v 0.76vf |
|
2SC5551AE-TD-E |
ON Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt high-current switching |
|
ECH8652-TL-H |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet switching device |
|
|
BYC8-600,127 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching rail pwrdiode |
