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IRG4BC30KS |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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IRG4BC30S-S_04 |
International Rectifier |
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insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.4V, @vge=15v, Ic=18a) |
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IRG4BC30KS_04 |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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IRG4BC30SS_04 |
International Rectifier |
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insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.4V, @vge=15v, Ic=18a) |
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IRG4BC30UD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.95v, @vge=15v, Ic=12a) |
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IRG4BC30SS |
International Rectifier |
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insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.4V, @vge=15v, Ic=18a) |
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IRG4PC30 |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.59v, @vge=15v, Ic=17a) |
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IRG4PC30FD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.59v, @vge=15v, Ic=17a) |
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IRG4PC30F |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.59v, @vge=15v, Ic=17a) |
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IRG4PC30UD |
International Rectifier |
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.95v, @vge=15v, Ic=12a) |
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IRG4PC30W |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)max.=2.70v, @vge=15v, Ic=12a) |
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IRG4BC10KD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.2.39v, @vge=15v, Ic=5.0A) |
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IRG4BC10UD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.15v, @vge=15v, Ic=5.0A) |
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IRG4BC15MD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.88v, @vge=15v, Ic=8.6A) |
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IRG4BC30 |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.59v, @vge=15v, Ic=17a) |
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IRG4BC30FD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.59v, @vge=15v, Ic=17a) |
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IRG4BC20WS |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.16v, @vge=15v, Ic=6.5A) |
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IRG4BC30K-S_04 |
International Rectifier |
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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IRG4BC30KD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
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IRG4BC30KD-S |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
