|   | IRGBC20UD2 | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, @vge=15v, Ic=6.5A) | 
    |   | IRGP440UD2 | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=500v, @vge=15v, Ic=22a) | 
    |   | IRGP450UD2 | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery(vces=500v, @vge=15v, Ic=33a) | 
    |   | IRGPC40UD2 | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, @vge=15v, Ic=20a) | 
    |   | IRGPC50UD2 | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery(vces=600v, @vge=15v, Ic=27a) | 
    |   | IRGBC30M-S | International Rectifier |  |  | insulated gate bipolar transistor(vces=600v, @vge=15v, Ic=16a) | 
    |   | IRG4PH40KD | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.47v, @vge=15v, Ic=15a) | 
    |   | IRG4PH40U | International Rectifier |   | 半导体 | insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.43v, @vge=15v, Ic=21a) | 
    |   | IRG4PH40UD | International Rectifier |   | 半导体 | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.43v, @vge=15v, Ic=21a) | 
    |   | IRG4PH50K | International Rectifier |   | 半导体 | insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.77v, @vge=15v, Ic=24a) | 
    |   | IRG4PH50KD | International Rectifier |   | 半导体 | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.77v, @vge=15v, Ic=24a) | 
    |   | IRG4PH50S | International Rectifier |   | 半导体 | insulated gate bipolar transistor(vces=1200v, vce(on)typ.=1.47v, @vge=15v, Ic=33a) | 
    |   | IRG4PH50U | International Rectifier |  |  | insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.78v, @vge=15v, Ic=24a) | 
    |   | IRG4PH50UD | International Rectifier |  |  | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.78v, @vge=15v, Ic=24a) | 
    |   | IRG4PSC71UD | International Rectifier |   | 半导体 | insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.67v, @vge=15v, Ic=60a) | 
    |   | RGBC40M | International Rectifier |  |  | insulated gate bipolar transistor(vces=600v, @vge=15v, Ic=24a) | 
    |   | IRG4PSH71K | International Rectifier |  | 半导体 | insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.97v, @vge=15v, Ic=42a) | 
    |   | IRGB440U | International Rectifier |  |  | insulated gate bipolar transistor(vces=500v, @vge=15v, Ic=22a) | 
    |   | IRGPH20M | International Rectifier |  |  | insulated gate bipolar transistor(vces=1200v, @vge=15v, Ic=4.5A) | 
    |   | IRGPH20S | International Rectifier |  |  | insulated gate bipolar transistor(vces=1200v, @vge=15v, Ic=6.6A) |