|
STT13005D-K |
STMicroelectronics |
  |
半导体
分离式半导体
|
transistors bipolar - bjt high voltage npn 700v vces 400v vceo |
|
NSS40600CF8T1G |
ON Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt low vces 40v pnp |
|
2STL2580 |
STMicroelectronics |
|
半导体
分离式半导体
|
transistors bipolar - bjt high volt npn trans 800v vces 400v vceo |
|
TRD236DT4 |
STMicroelectronics |
|
半导体
分离式半导体
|
transistors bipolar - bjt high voltage npn 700v vces 400v vceo |
|
|
TRD136DT4 |
STMicroelectronics |
|
半导体
分离式半导体
|
transistors bipolar - bjt high voltage npn 700v vces 400v vceo |
|
|
STBV42D |
STMicroelectronics |
|
半导体
分离式半导体
|
transistors bipolar - bjt npn 700v vces 400vceo 9vebo 1A |
|
SNSS40600CF8T1G |
ON Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt low vces 40v pnp chipfet |
|
|
SNSS30201MR6T1G |
ON Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt ssp low vces 30v npn xtr |
|
|
MJE16204 |
Motorola, Inc |
|
|
power transistors 6.0 amperes 550 volts-. vces 45 and 80 watts |
|
IRG4BC40S |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.32v, @vge=15v, Ic=31a) |
|
IRG4PC40 |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.50v, @vge=15v, Ic=27a) |
|
|
IRG4PC40KD |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.1V, @vge=15v, Ic=25a) |
|
|
IRG4PC40S |
International Rectifier |
|
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.32v, @vge=15v, Ic=31a) |
|
IRG4PC40UD |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode( vces=600v, vce(on)typ.=1.72v, @vge=15v, Ic=20a) |
|
|
IRG4PC50FD |
International Rectifier |
|
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.45v, @vge=15v, Ic=39a) |
|
|
IRG4BC30US |
International Rectifier |
|
|
insulated gate bipolar transistor ultrafast speed igbt(vces=600v, vce(on)typ. = 1.95v, @vge=15v, Ic=12a) |
|
IRG4BC20KDS |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.27v, @vge=15v, Ic=9.0A) |
|
|
IRG4BC20KS |
International Rectifier |
|
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.27v, @vge=15v, Ic=9.0A) |
|
IRG4BC20MD-S |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.85v, @vge=15v, Ic=11a) |
|
|
IRG4BC30KDS |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
