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HN62408 |
Hitachi Semiconductor |
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524288-word X 16-bit/1048576-word X 8-bit cmos mask programmable rom |
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HN62408FP |
Hitachi Semiconductor |
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524288-word X 16-bit/1048576-word X 8-bit cmos mask programmable rom |
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HN62408P |
Hitachi Semiconductor |
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524288-word X 16-bit/1048576-word X 8-bit cmos mask programmable rom |
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MR27V6402G |
OKI electronic componets |
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4M?word ? 16?bit or 8M?word ? 8?bit otp |
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TC55W800FT |
Toshiba Semiconductor and Storage |
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524,288-word BY 16-bit/1,048,576-word BY 8-bit full cmos static ram |
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TC55W800FT-55 |
Toshiba Semiconductor and Storage |
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524,288-word BY 16-bit/1,048,576-word BY 8-bit full cmos static ram |
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TC55W800FT-70 |
Toshiba Semiconductor and Storage |
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524,288-word BY 16-bit/1,048,576-word BY 8-bit full cmos static ram |
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TC55VBM416AFTN55 |
Toshiba Semiconductor and Storage |
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1,048,576-word BY 16-bit/2,097,152-word BY 8-bit full cmos static ram |
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TC55W1600FT |
Toshiba Semiconductor and Storage |
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1,048,576-word BY 16-bit/2,097,152-word BY 8-bit full cmos static ram |
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TC55W1600FT-55 |
Toshiba Semiconductor and Storage |
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1,048,576-word BY 16-bit/2,097,152-word BY 8-bit full cmos static ram |
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TC55W1600FT-70 |
Toshiba Semiconductor and Storage |
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1,048,576-word BY 16-bit/2,097,152-word BY 8-bit full cmos static ram |
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TC55V1403J-15 |
Toshiba Semiconductor and Storage |
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4,194,304 word BY 1-bit/1,048,576 word BY 4 bit cmos static ram |
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TC55V1403J-20 |
Toshiba Semiconductor and Storage |
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4,194,304 word BY 1-bit/1,048,576 word BY 4 bit cmos static ram |
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MSM538002E-xxGS-K |
OKI electronic componets |
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524,288-word x 16-bit or 1,048,576-word x 8-bit maskrom |
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MSM538002E-xxRS |
OKI electronic componets |
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524,288-word x 16-bit or 1,048,576-word x 8-bit maskrom |
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MSM538002E-xxTS-AK |
OKI electronic componets |
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524,288-word x 16-bit or 1,048,576-word x 8-bit maskrom |
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M5M29FB800RV-10 |
Mitsubishi Electric |
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8,388,608-bit (1048,576-576-word BY 8-bit / 524,288-word by16-bit)cmos 3.3V-only, block erase flash memory |
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M5M29FT800RV-10 |
Mitsubishi Electric |
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8,388,608-bit (1048,576-576-word BY 8-bit / 524,288-word by16-bit)cmos 3.3V-only, block erase flash memory |
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M5M29FB800RV-12 |
Mitsubishi Electric |
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8,388,608-bit (1048,576-576-word BY 8-bit / 524,288-word by16-bit)cmos 3.3V-only, block erase flash memory |
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M5M29FT800RV-12 |
Mitsubishi Electric |
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8,388,608-bit (1048,576-576-word BY 8-bit / 524,288-word by16-bit)cmos 3.3V-only, block erase flash memory |