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| 型号: | NDB6060L |
| 厂商: |
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| 标准: | |
| 分类: | 半导体 , 分离式半导体 |
| 描述: | MOSfet N-Ch LL fet enhancement mode |
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Datasheet下载地址
| 本地下载 厂商下载2 >> 第三方平台下载 >> |
NDB6060L的详细信息
| Manufacturer: | Fairchild Semiconductor |
|---|---|
| Product Category: | MOSFET |
| RoHS: | Yes |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Breakdown Voltage: | 16 V |
| Id - Continuous Drain Current: | 48 A |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Configuration: | Single |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 100 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-2 |
| Packaging: | Reel |
| Brand: | Fairchild Semiconductor |
| Channel Mode: | Enhancement |
| Fall Time: | 161 ns |
| Minimum Operating Temperature: | - 65 C |
| Rise Time: | 320 ns |
| Series: | NDB6060 |
| Factory Pack Quantity: | 800 |
| Typical Turn-Off Delay Time: | 49 ns |
| Part # Aliases: | NDB6060L_NL |
| Unit Weight: | 1.312 g |
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