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PSMN2R6-40YS,115的详细信息
| Manufacturer: | NXP |
|---|---|
| Product Category: | MOSFET |
| RoHS: | Yes |
| Brand: | NXP Semiconductors |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Id - Continuous Drain Current: | 100 A |
| Rds On - Drain-Source Resistance: | 2.6 mOhms |
| Pd - Power Dissipation: | 131 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | LFPAK33-4 |
| Packaging: | Reel |
| Fall Time: | 15 ns |
| Rise Time: | 22 ns |
| Factory Pack Quantity: | 1500 |
| Typical Turn-Off Delay Time: | 46 ns |
PSMN2R6-40YS,115相关文档
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)

- Thermal model: PSMN2R6-40YS Thermal model (v.1.0)

- Application note: LFPAK MOSFET thermal design guide (v.2.0)

- Leaflet: LFPAK - The Toughest Power SO8 (v.1.2)

- SPICE model: PSMN2R6-40YS SPICE model (v.1.0)

- Leaflet: 25 V to 100 V MOSFETs in Power-SO8 (v.1.0)

- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)

- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)

- PCN: Final Product Change Notification

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