信息提示:
您已经点过赞,谢谢!
Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
SIHG24N65E-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Continuous Drain Current: | 24 A |
Rds On - Drain-Source Resistance: | 145 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 122 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 250 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Fall Time: | 69 ns |
Forward Transconductance - Min: | 7.1 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 84 ns |
Series: | SIHG24N65E |
Factory Pack Quantity: | 25 |
Typical Turn-Off Delay Time: | 70 ns |
扫码手机查看更方便
同类器件