信息提示:

您已经点过赞,谢谢!

Image SIHG24N65E-GE3
型号:

SIHG24N65E-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 650v 145mohm@10v 24a N-Ch E-srs
报错 收藏

SIHG24N65E-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 24 A
Rds On - Drain-Source Resistance: 145 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 122 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 250 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Fall Time: 69 ns
Forward Transconductance - Min: 7.1 S
Minimum Operating Temperature: - 55 C
Rise Time: 84 ns
Series: SIHG24N65E
Factory Pack Quantity: 25
Typical Turn-Off Delay Time: 70 ns